Title :
Germanium condensation for co-integration: strain study by dark-field electron holography
Author :
Boureau, Victor ; Benoit, Daniel ; Warot, Benedicte ; Hytch, Martin J. ; Claverie, Alain
Author_Institution :
CEMES, Univ. de Toulouse, Toulouse, France
Abstract :
We study the strain characteristics of thin SiGe layers on insulator processed by the germanium condensation technique. We perform dark-field electron holography measurements and show the relation between strain and Ge content in the layers. The characteristics of the condensation process are discussed for the realization of co-integrated MOS structures.
Keywords :
Ge-Si alloys; MIS structures; condensation; deformation; electron holography; semiconductor materials; semiconductor-insulator boundaries; Ge content; SiGe; co-integrated MOS structures; dark-field electron holography measurements; germanium condensation technique; strain characteristics; thin SiGe layers; Area measurement; Diffraction; Electron microscopy; Semiconductor device measurement; Silicon; Thickness measurement; CMOS process; Germanium condensation; Holography; Silicon germanium; Silicon-on-insulator; Strain measurement; Transmission electron microscopy;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th
Conference_Location :
Aci Castello
DOI :
10.1109/NMDC.2014.6997415
