Synthesis and properties of Au/PVP/p-Si/Al heterojunction diode

Properties of heterojunction diodes having polyvinyl pyrrolidone (PVP) on p-Si substrate are investigated. PVP layer has grown onto p type silicon substrate via the sol gel spin coating route @ 2000 rpm. The Front contacts have been thermally evaporated in vacuum onto the organic layer at low pressure of 10-6 T, having a diameter of 1.5 mm and a thickness around 250 ± 10 nm. In this research, the electronic parameters of Au/PVP/p-Si/Al structures have been investigated. The obtained values indicate that the electronic parameters of the diode, like ideality factor (n), saturation current, barrier height (Φ_B), and rectification coefficient (R) are respectively found to be (in dark) 2.2, 0.8 μA, 0.61 V, and 1.85×10⁴. The open circuit voltage V_OC is about 0.2 V. A non-diode ideal behavior is observed and ideality factor exceeds the unity (n>5). Consequently, V_OC only depends on the solar cell material. We fabricate the device in the aim to use it in solar cell, photodiode and photoconductor applications.