Title :
Simulation of p-GaN/ i-InGaN/n-GaN solar cell
Author :
Boudaoud, Chahrazed ; Hamdoune, Abdelkader ; Allam, Zehor
Author_Institution :
Unity of Res. “Mater. & Renewable Energies”, Univ. of Abou-bekr Belkaid, Tlemcen, Algeria
Abstract :
The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The direct gap of the InxGa1-xN alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.
Keywords :
III-V semiconductors; gallium alloys; indium alloys; nickel alloys; power engineering computing; solar cells; wide band gap semiconductors; III-nitride material system; InxGa1-xN; SILVACO software; alloy system; direct gap; high-efficiency solar cells; illumination conditions; Charge carrier processes; Doping; Gallium nitride; Materials; Metals; Photonic band gap; Photovoltaic cells; Gallium Nitride (GaN); Indium Gallium Nitride (InGaN); Indium Nitride (InN); tandem solar cells;
Conference_Titel :
Dielectric Materials for Photovoltaic Systems (NAWDMPV), 2014 North African Workshop on
Conference_Location :
Tlemcen
Print_ISBN :
978-1-4799-6502-1
DOI :
10.1109/NAWDMPV.2014.6997614
