Characterization and simulation of traps in InGaP/GaAs HBT by GR noise analysis

Author

Al Hajjar, Ahmad ; Nallatamby, Jean-Christophe ; Prigent, Michel ; Jacquet, Jean-Claude

Author_Institution

XLIM, Univ. de Limoges, Brive-la-Gaillarde, France

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

5

Lastpage

8

Abstract

This paper has two main axis: first, the low frequency noise characteristics of InGaP/GaAs HBT are investigated for the 100 Hz to 10 MHz frequency range and the temperature range of 300°K to 375°K at low as well as high injection levels. Low frequency generation recombination noise measurements revealed an electron trap with activation energy of 0.536eV. Then, from a rigorous physics-based noise simulation using the Langevin approach within the framework of Green´s function, traps detected by temperature-dependent experimental observation is located at the heterointerface δ-InGaP/GaAs, responsible for the GR noise sources. The simulated results are in good agreement with experimental data.

Keywords

Green´s function methods; III-V semiconductors; electron traps; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; noise measurement; semiconductor device measurement; semiconductor device noise; Green´s function; HBT; InGaP-GaAs; Langevin; electron trap; electron volt energy 0.536 eV; frequency 100 Hz to 10 MHz; heterojunction bipolar transistors; noise analysis; noise measurements; rigorous physics-based noise simulation; temperature 300 K to 375 K; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Noise measurement; Semiconductor device measurement; Temperature measurement; InGaP/GaAs heterojunction; LF Noise Measurement; Noise corner frequencies; Numerical simulation; Traps;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997777

Filename

6997777