Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS

Author

Ren-Jia Chan ; Jyh-Chyurn Guo

Author_Institution

Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

13

Lastpage

16

Abstract

Analytical models of skin effect and proximity effect were developed in this paper to calculate and predict the frequency dependent resistance, Re(Z_in) and Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Z_in) and Q measured from mm-wave inductor (L_dc~150pH, Q_max ~17, f_SR>>65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.

Keywords

CMOS integrated circuits; inductors; integrated circuit design; integrated circuit modelling; millimetre wave devices; nanoelectronics; proximity effect (lithography); skin effect; Si; circuit simulation; complementary metal oxide semiconductor; frequency dependent resistance; material parameters; millimeter-wave inductor design; nanoscale CMOS; proximity effect; size 65 nm; Analytical models; Eddy currents; Inductors; Metals; Proximity effects; Skin; Skin effect; Analytical model; CMOS; mm-wave inductor; proximity; skin;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997779

Filename

6997779