A 5GHz/60GHz receiver front-end IC in 90nm CMOS technology

Author

Inagaki, R. ; Tanaka, T. ; Tsuru, Masato ; Taniguchi, E. ; Fukumoto, H. ; Kameda, Suguru ; Suematsu, Noriharu ; Taira, A. ; Takagi, Toshiyuki ; Tsubouchi, Kazuo

Author_Institution

Mitsubishi Electr. Corp., Kamakura, Japan

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

21

Lastpage

24

Abstract

This paper presents a multi-band receiver front-end IC in 90nm CMOS technology. The receiver front-end IC is switchable between a 5GHz front-end and a 60GHz front-end. The architecture of the receiver front-end IC is a direct conversion in 5GHz band and a superheterodyne in 60GHz band. For the miniaturization, the 5GHz and 60GHz front-ends share a variable gain amplifier for adjustment of power level and a quadrature mixer for frequency conversion. The multi-band (5GHz/60GHz) receiver front-end IC achieved conversion gain of 32dB with noise figure (NF) of 5dB at 5GHz band and conversion gain of 32dB with NF of 8dB at 60GHz band.

Keywords

CMOS integrated circuits; field effect MIMIC; field effect MMIC; microwave amplifiers; microwave mixers; microwave receivers; millimetre wave amplifiers; millimetre wave mixers; millimetre wave receivers; CMOS technology; direct conversion; frequency 5 GHz; frequency 60 GHz; frequency conversion; gain 32 dB; multiband receiver front-end integrated circuit; noise figure 5 dB; power level adjustment; quadrature mixer; size 90 nm; superheterodyne; variable gain amplifier; Gain; Integrated circuits; Mixers; Noise measurement; Radio frequency; Receivers; CMOS; LNA; VGA; front-end; millimeter-wave; multi-band; receiver;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997781

Filename

6997781