A wideband 65nm CMOS transformer-coupled power amplifier for WiGig applications

Author

Larie, Aurelien ; Kerherve, Eric ; Martineau, Baudouin ; Belot, Didier

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

41

Lastpage

44

Abstract

This paper describes a compact two-stage pseudodifferential cascode power amplifier implemented in 7-metal-layer 65nm Low-Power CMOS process. A cascode topology is associated with wideband matching networks which combine integrated transformers and slow-wave transmission lines. The power amplifier achieves 26GHz of bandwidth from 48GHz to 74GHz, with a 1dB ripple flat gain between 50GHz and 70GHz. The circuit delivers 1dB-compressed and saturated output powers of 9.5dBm and 13dBm respectively, for a maximum power added efficiency of 6%. The active area occupies only 0.048mm².

Keywords

CMOS integrated circuits; power amplifiers; wideband amplifiers; WiGig applications; bandwidth 26 GHz; cascode topology; compact two-stage pseudodifferential cascode power amplifier; efficiency 6 percent; frequency 48 GHz to 74 GHz; frequency 50 GHz to 70 GHz; integrated transformers; size 65 nm; slow-wave transmission lines; wideband CMOS transformer-coupled power amplifier; wideband matching networks; CMOS integrated circuits; Impedance; Power amplifiers; Power transmission lines; Transmission line measurements; Wideband; 60GHz; 65nm CMOS; integrated transformers; slow-wave transmission lines; wideband power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997786

Filename

6997786