Title :
A 17.5-dBm D-band power amplifier and doubler chain in SiGe BiCMOS technology
Author :
Ben Yishay, Roee ; Elad, Danny
Author_Institution :
IBM Haifa Res. Lab., Haifa, Israel
Abstract :
A D-Band ×2 frequency multiplier-amplifier chain implemented in a fT/fMAX = 200/250GHz 0.12μm SiGe BiCMOS technology is presented. The chain achieves a peak output power of 17.5dBm at 115GHz and consists of input balun and push-push frequency doubler which drives a balanced three stages Power Amplifier (PA). It operates from 108GHz to 128GHz (3 dB power bandwidth) with 3dBm input power at V-Band and consumes a total DC power of 600mW. The PA achieves output 1dB compression point and saturated power of 13.3 and 17.1dBm, respectively, at 120GHz and peak small signal gain of 25.5dB.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; baluns; frequency multipliers; microwave power amplifiers; BiCMOS technology; D-band power amplifier; SiGe; doubler chain; frequency 108 GHz to 128 GHz; frequency 115 GHz; frequency 120 GHz; frequency 200 GHz; frequency 250 GHz; frequency multiplier-amplifier chain; gain 25.5 dB; input balun; power 600 mW; push-push frequency doubler; size 0.12 mum; Bandwidth; Gain; Impedance matching; Power amplifiers; Power generation; Power measurement; Silicon germanium; D-Band; Frequency Doubler; Millimeter-wave Integrated Circuits; Power Amplifier; SiGe BiCMOS;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997789
