Title :
6–12 GHz double-balanced image-reject mixer MMIC in 0.25μm AlGaN/GaN technology
Author :
van Heijningen, M. ; Hoogland, J.A. ; de Hek, A.P. ; van Vliet, Frank E.
Author_Institution :
Radar Technol. Group, TNO, The Hague, Netherlands
Abstract :
The front-end circuitry of transceiver modules is slowly being updated from GaAs-based MMICs to GalliumNitride. Especially GaN power amplifiers and TR switches, but also low-noise amplifiers, offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to complete a fully GaN-based front-end. In this paper the design-experiment and measurement results of a double-balanced image-reject mixer MMIC in 0.25 μm AlGaN/GaN technology are presented. This design features an integrated LO amplifier and active IF balun. The measured conversion loss is less than 8 dB from 6 to 12 GHz, at 0 dBm LO power.
Keywords :
III-V semiconductors; MMIC mixers; aluminium compounds; baluns; gallium arsenide; gallium compounds; low noise amplifiers; microwave power amplifiers; mixers (circuits); wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN technology; GaAs; GaAs components; GaN mixer; TR switches; active IF balun; double-balanced image-reject mixer MMIC; frequency 6 GHz to 12 GHz; front-end circuitry; integrated LO amplifier; low-noise amplifiers; power amplifiers; size 0.25 mum; transceiver modules; Frequency measurement; Gain; Gallium nitride; Impedance matching; MMICs; Mixers; Radio frequency; Gallium Nitride; MMICs; Mixers;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997792
