Title :
28 Watt X-band silicon P-I-N diode RFIC switches
Author :
Brogle, James J. ; Rozbicki, Andrzej ; Boles, Timothy E.
Author_Institution :
M/A-COM Technol. Solutions, Lowell, MA, USA
Abstract :
Terminated and reflective integrated P-I-N diode switches capable of greater than 28W measured linear power handling at X-band have been developed. These extremely high performance devices exhibit low insertion loss, high isolation and excellent match to a 50ohm system. The enabling technology is M/A-COM Technology Solutions´ patented silicon-glass HMIC process, providing lower parasitic impedances and variation than hybrid-discrete P-I-N diode modules. Test results of HMIC-fabricated switches are presented and compared with thermal models and EM simulations. Power linearity performance (0.1dB compression @ 28W) has been demonstrated in a silicon-based technology, superior to reported GaN HEMT switch performance.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; high electron mobility transistors; microwave diodes; microwave switches; p-i-n diodes; silicon; wide band gap semiconductors; GaN; GaN HEMT switch performance; HMIC-fabricated switches; M/A-COM technology solutions; RFIC switches; Si; X-band silicon PIN diode; insertion loss; linear power handling; parasitic impedances; patented silicon-glass HMIC process; power 28 W; power linearity performance; reflective integrated PIN diode switches; resistance 50 ohm; silicon-based technology; terminated integrated PIN diode switches; Insertion loss; Microwave circuits; Microwave integrated circuits; P-i-n diodes; Schottky diodes; Shunts (electrical); Thermal resistance; Electromagnetic analysis; MMICs; P-I-N diodes; X-band; microwave integrated circuits; power dissipation; switches; thermal analysis;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997793
