An L-band SiGe BiCMOS core chip MMIC for transmit/receive modules

Author

Hagiwara, Tomomichi ; Shinjo, Shintaro ; Kagano, Miki ; Taniguchi, E.

Author_Institution

Mitsubishi Electr. Corp., Kamakura, Japan

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

73

Lastpage

76

Abstract

In this paper, an L-band transmitter and receiver MMIC, which is known as a core chip for phased array communication and radar applications is presented. The MMIC is fabricated in 0.18 μm SiGe-BiCMOS process, comprises an RX amplifier, a 5-bit active phase shifter, SPDT switches, and a TX amplifier. The RX amplifier realized low noise and high linearity with dual bias-feed techniques. The measurement results show, in receive mode, a gain of 25.5 dB, a noise figure of 1.9 dB, and an input P1dB of -16 dBm in L-band. The MMIC is capable of providing 32 phase states from 0° to 360°, with an RMS phase error of lower than 2.3° and an RMS gain error of lower than 0.5 dB. In transmit mode, the gain of 32 dB, and the saturated output power of 15 dBm are achieved.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC phase shifters; microwave amplifiers; microwave switches; phased array radar; 5-bit active phase shifter; BiCMOS process; L-band BiCMOS core chip MMIC; L-band receiver MMIC; L-band transmitter MMIC; RX amplifier; SPDT switches; SiGe; TX amplifier; dual bias-feed techniques; gain 25.5 dB; gain 32 dB; noise figure 1.9 dB; phased array communication; radar applications; size 0.18 mum; transmit receive modules; Arrays; Gain; L-band; MMICs; Noise measurement; Phase shifters; Power generation; Core chip; L-Band; Phased array; Receiver; SiGe BiCMOS; Transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997794

Filename

6997794