On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

Author

Altuntas, Philippe ; Defrance, Nicolas ; Lesecq, Marie ; Agboton, Alain ; Ouhachi, R. ; Okada, Etienne ; Gaquiere, Christopher ; De Jaeger, J.-C. ; Frayssinet, E. ; Cordier, Yvon

Author_Institution

IEMN, Villeneuve-d´Ascq, France

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

88

Lastpage

91

Abstract

This paper reports on the kink effect observed in InAlN/GaN high electron mobility transistors. Electrical characterizations were carried out to point out the influence of this phenomenon on transistor behaviour. It is demonstrated that the kink effect is directly correlated to shallow traps located under the conduction band. A model is proposed to highlight the influence of scattering effects on the effective mobility, permitting to describe accurately the locus of the so-called kink voltage for a gate bias close to the pinch-off voltage.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device models; wide band gap semiconductors; HEMT; InAlN-GaN; effective mobility; electrical characterizations; gate bias; high electron mobility transistors; kink effect; kink voltage; pinch-off voltage; scattering effects; shallow traps; Electron traps; Gallium nitride; HEMTs; Impact ionization; Logic gates; MODFETs; Voltage measurement; InAlN/GaN; effective mobility; high electron mmobility transistor (HEMT); kink effect; traps;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997798

Filename

6997798