A GaN Schottky Diode-based analog phase shifter MMIC

Author

Chong Jin ; Okada, Etienne ; Faucher, Marc ; Ducatteau, Damien ; Zaknoune, Mohammed ; Pavlidis, Dimitris

Author_Institution

Inst. of Electron., Microelectron. & Nanotechnol., (IEMN), Villeneuve-d´Ascq, France

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

96

Lastpage

99

Abstract

A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in view of its potential for robust power operation. The phase shifter presents analog phase shifting capability up to 45° with ~ 7 dB insertion loss and a maximum VSWR of 2:1 in the 32 to 38 GHz range. Good power handling capability and robust performance is demonstrated through large signal analysis and experimental characterization.

Keywords

III-V semiconductors; MMIC phase shifters; Schottky diodes; gallium compounds; millimetre wave diodes; millimetre wave phase shifters; wide band gap semiconductors; GaN; GaN Schottky diode; MMIC realization; T-topology; analog phase shifter MMIC; e-beam technology; frequency 32 GHz to 38 GHz; large signal analysis; large-signal diode characteristics; power handling capability; small-signal diode characteristics; Capacitance; Gallium nitride; Inductors; Insertion loss; MMICs; Phase shifters; Schottky diodes; Gallium nitride; Phase shifter; Schottky diode;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997800

Filename

6997800