Conduction Mechanisms and Breakdown Characteristics of $\\hbox {Al}_{2}\\hbox {O}_{3}$ -Doped $\\hbox {ZrO}_{2}$

Author

Knebel, S. ; Schroeder, Ulrik ; Dayu Zhou ; Mikolajick, Thomas ; Krautheim, Gunter

Author_Institution

Nanoelectronic Mater. Lab. gGmbH, Dresden, Germany

Volume

14

Issue

1

fYear

2014

fDate

Mar-14

Firstpage

154

Lastpage

160

Abstract

This paper presents the results of I-V and constant-voltage-stress measurements on symmetrical dielectric ZrO₂/Al₂O₃/ZrO₂ film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal-insulator-metal capacitors. The temperature-dependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated. A correlation was found between the structural composition, the defect density, and the conduction mechanism.

Keywords

MIM devices; aluminium compounds; atomic layer deposition; dielectric materials; electric breakdown; stress measurement; voltage measurement; zirconium compounds; Al₂O₃:ZrO₂; I-V measurements; ZrO₂-Al₂O₃-ZrO₂; atomic layer deposition; breakdown characteristics; conduction mechanisms; constant-voltage-stress measurements; cylindrical metal-insulator-metal capacitors; dielectric breakdown; high-k dielectrics; three-dimensional stacked metal-insulator-metal capacitors; Aluminum oxide; Dielectrics; Electrodes; Films; Permittivity; Temperature measurement; Tin; $hbox{ZrO}_{2}$; High-$k$; leakage model; metal–insulator–metal (MIM) capacitor; reliability;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2012.2204058

Filename

6215028

Conduction Mechanisms and Breakdown Characteristics of -Doped

Knebel, S. ; Schroeder, Ulrik ; Dayu Zhou ; Mikolajick, Thomas ; Krautheim, Gunter

jour

Conduction Mechanisms and Breakdown Characteristics of $\\hbox {Al}_{2}\\hbox {O}_{3}$ -Doped $\\hbox {ZrO}_{2}$