مرکز منطقه ای اطلاع رساني علوم و فناوري - Conduction Mechanisms and Breakdown Characteristics of <formula formulatype="inline"> <img src="/images/tex/920.gif" alt="\\hbox {Al}_{2}\\hbox {O}_{3}"> </formula>-Doped <formula formulatype="inline"> <img src="/images/tex/592.gif" alt="\\hbox {ZrO}

Title :

Conduction Mechanisms and Breakdown Characteristics of $\\hbox {Al}_{2}\\hbox {O}_{3}$ -Doped $\\hbox {ZrO}_{2}$

Author :

Knebel, S. ; Schroeder, Ulrik ; Dayu Zhou ; Mikolajick, Thomas ; Krautheim, Gunter

Author_Institution :

Nanoelectronic Mater. Lab. gGmbH, Dresden, Germany

Volume :

Issue :

fYear :

2014

fDate :

Mar-14

Firstpage :

154

Lastpage :

160

Abstract :

This paper presents the results of I-V and constant-voltage-stress measurements on symmetrical dielectric ZrO₂/Al₂O₃/ZrO₂ film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal-insulator-metal capacitors. The temperature-dependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated. A correlation was found between the structural composition, the defect density, and the conduction mechanism.

Keywords :

MIM devices; aluminium compounds; atomic layer deposition; dielectric materials; electric breakdown; stress measurement; voltage measurement; zirconium compounds; Al₂O₃:ZrO₂; I-V measurements; ZrO₂-Al₂O₃-ZrO₂; atomic layer deposition; breakdown characteristics; conduction mechanisms; constant-voltage-stress measurements; cylindrical metal-insulator-metal capacitors; dielectric breakdown; high-k dielectrics; three-dimensional stacked metal-insulator-metal capacitors; Aluminum oxide; Dielectrics; Electrodes; Films; Permittivity; Temperature measurement; Tin; $hbox{ZrO}_{2}$; High-$k$; leakage model; metal–insulator–metal (MIM) capacitor; reliability;

fLanguage :

English

Journal_Title :

Device and Materials Reliability, IEEE Transactions on

Publisher :

ieee

ISSN :

1530-4388

Type :

jour

DOI :

10.1109/TDMR.2012.2204058

Filename :

6215028

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=17833