An E-band 40dB dynamic range multi-tanh power detector in 0.13μm SiGe technology

This paper describes circuit design and measurement results of a multi-tanh bipolar rms power detector (PD) for applications in E band (65-86 GHz) frequency range. The PD is designed and fabricated in IBM 0.13um SiGe technology. In the matched frequency range, the measured input dynamic range is over 40 dB, withstanding an input power of 17dBm, with an overall sensitivity of 27.5 mV/dB. The output voltage response is nearly frequency-independent, varying by less than 1.5 dB for a given input RF power, as the RF frequency is swept across the operating frequency range. Static power consumption is 12mW from a 2.7V supply.