Title :
Automatic extraction of analytical large-signal FET models with parameter estimation by function decomposition
Author :
van Raay, Friedbert ; Quay, Ruediger ; Seelmann-Eggebert, Matthias ; Schwantuschke, Dirk ; Peschel, Detlef ; Schlechtweg, Michael ; Ambacher, Oliver
Author_Institution :
Fraunhofer Inst. of Appl. Solid-State Phys. (IAF), Freiburg, Germany
Abstract :
Modern analytic large-signal equivalent circuit models of microwave III-V active devices such as high electron mobility transistors (HEMTs) normally require a large effort in two-dimensional (2D) data fitting and extraction of parameter sets for numerical functions. In this paper, an entire automatic extraction procedure is proposed which relies on a decomposition of numerical function data into one-dimensional spurs and a subsequent starting value estimation and optional pre-optimization and final 2D fitting without user interaction. As a first validation, the fitting quality of the automatic procedure is demonstrated for two advanced AlGaN/GaN HEMT technologies with different gate lengths of 0.25 μm und 0.1 μm.
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; parameter estimation; semiconductor device models; wide band gap semiconductors; 2D fitting; AlGaN-GaN; HEMT; analytical large-signal FET models; automatic extraction; function decomposition; high electron mobility transistors; large-signal equivalent circuit models; microwave III-V active devices; numerical function data; parameter estimation; parameter extraction; size 0.1 mum; size 0.25 mum; two-dimensional data fitting; Analytical models; Data mining; Data models; HEMTs; Integrated circuit modeling; Logic gates; MODFETs; AlGaN/GaN HEMT modeling; analytical models; model verification; parameter extraction;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997827
