GaN HEMT model extraction based on dynamic-bias measurements

Author

Vadala, Valeria ; Raffo, Antonio ; Vannini, Giorgio ; Avolio, Gustavo ; Schreurs, Dominique M. M.-P

Author_Institution

Dept. of Eng., Univ. of Ferrara, Ferrara, Italy

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

206

Lastpage

209

Abstract

In this paper a recently proposed identification procedure based on exciting the device under test simultaneously with low-frequency (LF) large-signal excitations and a high-frequency tickle tone, is applied for the first time to GaN transistors. It will be demonstrated that the proposed technique allows reaching good prediction capability even when challenging GaN technologies are considered where LF dispersion strongly affects the transistor behavior. A dedicated formulation for the drain-source current generator is used to correctly account for dispersive phenomena. As a case study a 0.25-μm GaN HEMT is considered. The extracted model has been validated through comparison with vector nonlinear measurements carried out at 10 GHz.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; GaN; GaN HEMT model extraction; LF dispersion; device under test; drain-source current generator; dynamic bias measurements; frequency 10 GHz; high-frequency tickle tone; identification procedure; low-frequency large-signal excitations; size 0.25 mum; transistor behavior; vector nonlinear measurements; Current measurement; Dispersion; Gallium nitride; Microwave circuits; Microwave transistors; Transistors; microwave FET; nonlinear microwave measurements; nonlinear transistor model;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997828

Filename

6997828