Thermal characterisation of AlGaN/GaN HEMT on silicon carbide substrate for high frequency application

Author

Alim, Mohammad A. ; Rezazadeh, Ali A. ; Ali, Md Mortuza ; Sinulingga, Emerson P. ; Kyabaggu, Peter B. ; Yongjian Zhang ; Gaquiere, Christopher

Author_Institution

Microwave & Commun. Syst. Group, Univ. of Manchester, Manchester, UK

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

210

Lastpage

213

Abstract

Temperature effect modelling and analysis have been carried out on 0.25 μm gate length AlGaN/GaN HEMT grown on SiC substrate over the temperature range from - 40 to 150°C by on-wafer S-parameter measurements up to 50 GHz. The temperature behaviour of the DC and equivalent circuit parameters including f_t and f_max were analyzed. The results provide some valuable insights for future design optimizations of advanced GaN based MMICs.

Keywords

III-V semiconductors; MMIC; S-parameters; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; silicon compounds; substrates; thermal analysis; wide band gap semiconductors; AlGaN-GaN; HEMT; MMIC; SiC; design optimization; equivalent circuit; high electron mobility transistor; high frequency application; monolithic microwave integrated circuit; on-wafer S-parameter measurement; silicon carbide substrate; size 0.25 mum; temperature -40 C to 150 C; temperature effect modelling; thermal characterisation; Aluminum gallium nitride; Gallium nitride; HEMTs; Silicon carbide; Temperature; Temperature dependence; Temperature measurement; AlGaN/GaN/SiC HEMT; equivalent circuit parameter; on-wafer measurement; temperature coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997829

Filename

6997829