Title :
Thermal characterisation of AlGaN/GaN HEMT on silicon carbide substrate for high frequency application
Author :
Alim, Mohammad A. ; Rezazadeh, Ali A. ; Ali, Md Mortuza ; Sinulingga, Emerson P. ; Kyabaggu, Peter B. ; Yongjian Zhang ; Gaquiere, Christopher
Author_Institution :
Microwave & Commun. Syst. Group, Univ. of Manchester, Manchester, UK
Abstract :
Temperature effect modelling and analysis have been carried out on 0.25 μm gate length AlGaN/GaN HEMT grown on SiC substrate over the temperature range from - 40 to 150°C by on-wafer S-parameter measurements up to 50 GHz. The temperature behaviour of the DC and equivalent circuit parameters including ft and fmax were analyzed. The results provide some valuable insights for future design optimizations of advanced GaN based MMICs.
Keywords :
III-V semiconductors; MMIC; S-parameters; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; silicon compounds; substrates; thermal analysis; wide band gap semiconductors; AlGaN-GaN; HEMT; MMIC; SiC; design optimization; equivalent circuit; high electron mobility transistor; high frequency application; monolithic microwave integrated circuit; on-wafer S-parameter measurement; silicon carbide substrate; size 0.25 mum; temperature -40 C to 150 C; temperature effect modelling; thermal characterisation; Aluminum gallium nitride; Gallium nitride; HEMTs; Silicon carbide; Temperature; Temperature dependence; Temperature measurement; AlGaN/GaN/SiC HEMT; equivalent circuit parameter; on-wafer measurement; temperature coefficient;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997829
