DocumentCode :
1783369
Title :
Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain
Author :
Mikulla, Michael ; Storm, Sabine ; Henelius, Niklas ; Poisson, Marie-Antoinette ; Zanoni, Enrico ; Kuball, M.
Author_Institution :
Fraunhofer IAF, Freiburg, Germany
fYear :
2014
fDate :
6-7 Oct. 2014
Firstpage :
221
Lastpage :
224
Abstract :
Manga (Manufacturable GaN: SiC substrates and GaN epi wafers supply chain) is a five nations (Germany, France, Italy, Sweden and the United Kingdom) program performed under the umbrella of the European Defense Agency (EDA). As a main aim the European capacity for an industrial production of high quality 100-mm semi-insulating SiC substrates has been shown. The achieved quality of the material has been validated by the GaN HEMT and MMIC foundry partners within the program. Results regarding transistor performance, reliability and the status of industrialization achieved in the Manga program are described. In addition, substantial progress has been made in the growing and processing of advanced InAlN-based HEMT structures for high-frequency applications. Well recognized research institutes from European universities have contributed with their expertise in detailed characterization of deep levels and parasitic effects in GaN HEMT devices in order to improve substrate quality and epitaxial growth conditions. The consortium is now planning for a follow-on project focusing on further substrate improvement, the qualification of an industrial European epi-wafer supplier as well as reliability aspects and advanced materials.
Keywords :
HEMT integrated circuits; integrated circuit reliability; semiconductor device manufacture; supply chains; EDA; European capacity; European defense agency; European universities; GaN HEMT; GaN epi wafer supply chain; InAlN-based HEMT structures; MMIC foundry partners; Manga program; high quality 100-mm semiinsulating SiC substrates; high-frequency applications; industrial European epi-wafer supplier; industrial production; industrialization; manufacturable GaN SiC substrates; research institutes; transistor performance; transistor reliability; Epitaxial growth; Europe; Gallium nitride; HEMTs; Silicon carbide; Substrates; Temperature measurement; GaN; HEMT; semi-insulating SiC substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
Type :
conf
DOI :
10.1109/EuMIC.2014.6997832
Filename :
6997832
Link To Document :
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