GH25-10: New qualified power GaN HEMT process from technology to product overview

Author

Floriot, D. ; Brunel, V. ; Camiade, M. ; Chang, Carole ; Lambert, B. ; Ouarch-Provost, Z. ; Blanck, H. ; Grunenputt, J. ; Hosch, M. ; Jung, H. ; Splettstober, J. ; Meiners, U.

Author_Institution

UMS-SAS, Villebon-sur-Yvette, France

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

225

Lastpage

228

Abstract

The performances and the results of the qualification plan of the new high power GaN HEMT process GH25-10 are summarized in this paper. This technology would be the first ¼ gate length process qualified in Europe on 4” SiC substrate and will be fully open in foundry mode mid of 2014. It addresses applications up to 20 GHz with state of the art figure of merits in term of power density, gain, efficiency and reliability. The first part is dedicated to the description of the process and the associated spread data analysis. A second part is focused on the review of the performances, the electrical domain of validity (operating ratings) and modeling capabilities. This view is completed by some results of the qualification process. Finally, the last part will be focused on the product development based on the GH25-10 GaN technology.

Keywords

III-V semiconductors; gallium compounds; integrated circuit reliability; power HEMT; wide band gap semiconductors; Europe; GH25-10 GaN technology; GaN; SiC; SiC substrate; electrical domain; high power GaN HEMT process; power density; power efficiency; power gain; power reliability; product overview; qualified power GaN HEMT process; size 4 inch; technology overview; Current measurement; Gallium nitride; HEMTs; Logic gates; Qualifications; Reliability; GaN HEMT; Interodulation; efficiency; power; process; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997833

Filename

6997833