Selex ES GaN technology: Improvements, results and R&D approach for 0.5μm and 0.25μm process

Author

Lanzieri, C. ; Pantellini, A. ; Romanini, P. ; Crispoldi, F. ; Nanni, A. ; Graffitti, R.

Author_Institution

Selex ES - GaAs/GaN Foundry R&D, Rome, Italy

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

229

Lastpage

232

Abstract

The capability to build systems entirely based on European technologies is an essential condition for all the companies working in the Defense and Space industry, in order to overcome possible problems related with the restrictions on export licenses (ITAR). For this reason from the last 40 years Selex ES Foundry has been committed to provide state-of-the-art solid state components, establishing a high level of technical capability in the design, processing and assembly of said components. In particular Selex ES Foundry is involved in a range of technological developments to consolidate and qualify half micron and quarter micron GaN technology.

Keywords

III-V semiconductors; foundries; gallium compounds; high electron mobility transistors; semiconductor device manufacture; semiconductor device reliability; wide band gap semiconductors; Defense and Space industry; European technologies; GaN; ITAR; Selex ES Foundry; Selex ES GaN technology; export licenses; half micron technology; quarter micron technology; size 0.25 mum; size 0.5 mum; solid state components; Current measurement; Gallium nitride; Logic gates; Performance evaluation; Radio frequency; Reliability; Stress; GaN-HEMT; Reliability; Source Field Plate;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997834

Filename

6997834