Structural field plate length optimization for high power applications

Author

Toprak, Ahmet ; Kurt, Gokhan ; Sen, Ozlem A. ; Ozbay, Ekmel

Author_Institution

Nanotechnol. Res. Center, Bilkent Univ., Ankara, Turkey

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

265

Lastpage

268

Abstract

In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate lengths of 0.2, 0.3, 0.5 and 0.7 μm have been fabricated. Great enhancement in radio frequency (RF) output power density was achieved with acceptable compromise in small signal gain. When biased at 35 V, at 3 dB gain compression, a continuous wave output power density of 5.2 W/mm, power-added efficiency (PAE) of 33% and small gain of 11.4 dB were obtained at 8 GHz using device with 0.5 μm field plate length and 800 μm gate width without using via hole technology.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave transistors; optimisation; plates (structures); silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; PAE; RF output power density; SiC; continuous wave output power density; drain source space; efficiency 33 percent; gain 11.4 dB; gain 3 dB; gate length; gate width; high electron mobility transistors; high power applications; optimum performance; power-added efficiency; radio frequency output power density; signal gain compression; structural field plate length optimization; via hole technology; voltage 35 V; Aluminum gallium nitride; Gain; Gallium nitride; HEMTs; Logic gates; MODFETs; Semiconductor device measurement; GaN HEMT; RF power applications; coplanar waveguide; field plate; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997843

Filename

6997843