A high gain E-band MMIC LNA in GaAs 0.1-μm pHEMT process for radio astronomy applications

Author

You-Tang Lee ; Chau-Ching Chiong ; Dow-Chih Niu ; Huei Wang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

456

Lastpage

459

Abstract

In this paper, we present an E-band MMIC low noise amplifier (LNA) using 0.1-μm GaAs pHEMT technology operating in 1V and 2V drain voltage. The E-band LNA shows small signal gain of 28 dB from 62 to 77 GHz with DC power consumption 44 mW. Noise measurement conducts in the package shows average noise figure about 4.5 dB from 75 to 90 GHz. The figure-of-merit (FOM) is 212.5 (GHz/mW), which is highest compared with other LNAs using 0.1-μm GaAs pHEMT technology.

Keywords

III-V semiconductors; MMIC amplifiers; gallium arsenide; high electron mobility transistors; low noise amplifiers; millimetre wave amplifiers; radioastronomy; 0.1-μm GaAs pHEMT technology; E-band LNA; E-band MMIC low noise amplifier; FOM; GaAs; figure-of-merit; frequency 62 GHz to 77 GHz; frequency 75 GHz to 90 GHz; gain 28 dB; noise measurement conducts; power 44 mW; radio astronomy applications; size 0.1 mum; voltage 1 V; voltage 2 V; Gain; Gallium arsenide; Low-noise amplifiers; Microwave integrated circuits; Noise figure; PHEMTs; HEMT; MMIC; low-noise amplifier; radio astronomy;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997891

Filename

6997891