An X-band low-power CMOS low noise amplifier with transformer inter-stage matching networks

Author

Jeng-Han Tsai ; Wang-Long Huang ; Cheng-Yen Lin ; Ruei-An Chang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Normal Univ., Taipei, Taiwan

fYear

2014

fDate

6-7 Oct. 2014

Firstpage

524

Lastpage

527

Abstract

This paper presents a low-power low noise amplifier (LNA) using standard 0.18-μm CMOS technology for X-band satellite receiver applications. Two-stage common source configuration with transformer matching network is chosen to achieve low power, low noise, and compact size while maintaining reasonable gain performance. The measured small signal gain is 13.4 dB at 11 GHz with low power consumption of 4.8 mW from a 1 V supply voltage. The chip size is 0.44 mm². With noise match at the first stage, the measured noise figure (NF) of the LNA is 3.41 dB at 11 GHz. Compared to previously reported X-band LNA in 0.18-μm CMOS process, the presented LNA demonstrates the highest FOM.

Keywords

CMOS integrated circuits; field effect MMIC; low noise amplifiers; low-power electronics; microwave amplifiers; microwave receivers; satellite communication; transformers; CMOS low noise amplifier; LNA; X-band amplifier; X-band satellite receiver; common source configuration; frequency 11 GHz; gain 13.4 dB; low power consumption; low-power amplifier; noise figure 3.41 dB; power 4.8 mW; size 0.18 mum; transformer inter-stage matching networks; transformer matching network; voltage 1 V; CMOS integrated circuits; CMOS technology; Gain; Inductors; Low-noise amplifiers; Noise figure; Transistors; CMOS; X-band; low noise amplifier (LNA); radio frequency integrated circuit (RFIC);

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuit Conference (EuMIC), 2014 9th

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMIC.2014.6997909

Filename

6997909