Title :
A 2.1/2.6 GHz dual-band high-efficiency GaN HEMT amplifier with harmonic reactive terminations
Author :
Enomoto, Jun ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution :
Univ. of Electro-Commun., Chofu, Japan
Abstract :
A dual-band high-efficiency GaN HEMT amplifier with harmonic reactive source and load impedances has been developed at the 2.1-GHz and 2.6-GHz bands. Many circuit components are required for this type of amplifier, since many frequencies have to be treated, which induces circuit loss. Here, a design strategy to avoid an efficiency reduction due to circuit loss is introduced. The fabricated dual-band GaN HEMT amplifier has achieved maximum power-added efficiencies (PAEs) of 72% and 61% with 36.7- and 37.1-dBm output powers at 2.13 and 2.6 GHz, respectively.
Keywords :
HEMT circuits; III-V semiconductors; gallium compounds; microwave power amplifiers; wide band gap semiconductors; GaN; HEMT amplifier; PAE; bandwidth 2.1 GHz; bandwidth 2.6 GHz; circuit loss; harmonic reactive terminations; load impedances; power-added efficiencies; Dual band; Frequency measurement; Gain; Gallium nitride; HEMTs; Harmonic analysis; Impedance; GaN HEMT; Power amplifier; dual-band; high efficiency; reactive termination;
Conference_Titel :
European Microwave Integrated Circuit Conference (EuMIC), 2014 9th
Conference_Location :
Rome
DOI :
10.1109/EuMIC.2014.6997914
