Simulation study of high step-up quasi-Z-source DC-DC converter with synchronous rectification

This paper discusses the performance improvement method of the recently popular galvanically isolated quasi-Z-source DC-DC converter. In order to decrease the conduction losses in the quasi-Z-source network and voltage doubler rectifier the replacement of diodes by the N-channel MOSFETs was analyzed. The proposed approach was validated by the computer simulations in PSIM environment with accurate models of the semiconductors based on the device datasheet values. Finally, the power losses and resulting efficiency of the proposed quasi-Z-source DC-DC converter with synchronous rectification were compared to those of the traditional topology.