Probing and modelling of carrier transport in organic devices by optical second harmonic generation

Author

Iwamoto, Mitsugu ; Manaka, Toshiki ; Taguchi, D.

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

By using a novel optical technique based on the electric field induced optical second harmonic generation (EFISHG) measurement, we can visualize carrier motions in organic devices. Basic concept for probing dynamical carrier motions by the EFISHG is described. We visualize carrier motions in organic field effect transistors, and model carrier transport mechanism. Further by coupling the EFISHG measurement with Displacement current measurement, we analyse carrier behaviours in organic memory elements with ferroelectric layer, in terms of turn-over of permanent dipoles in the ferroelectric layer.

Keywords

electric fields; optical harmonic generation; organic field effect transistors; semiconductor device measurement; semiconductor device models; carrier motions; carrier transport; electric field; ferroelectric layer; optical second harmonic generation measurement; organic devices; organic field effect transistors; organic memory elements; permanent dipoles; Electric fields; Electrodes; Gold; Optical variables measurement; Pentacene; Semiconductor device measurement; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998637

Filename

6998637