Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture

Author

Mikolasek, M. ; Vojs, M. ; Varga, M. ; Babchenko, O. ; Izak, T. ; Marton, M. ; Kromka, A. ; Harmatha, L.

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

The paper deals with electrical characterization of nanocrystalline diamond / p- type crystalline silicon heterostructures. The diamond films were prepared with and without nitrogen addition into CH₄/CO₂/H₂ gas mixture during the deposition. The introduced nitrogen promoted amorphization instead of creating sp² domains. The structure with nitrogen exhibits shallow donor state with energy of 0.28 eV. It is suggested that origin of such a state is related to nitrogen atoms trapped at the vacancies.

Keywords

amorphisation; diamond; elemental semiconductors; gas mixtures; nanostructured materials; semiconductor-insulator boundaries; silicon; thin films; vacancies (crystal); C; C-Si; amorphization; diamond film deposition; electrical characterization; electron volt energy 0.28 eV; gas mixture; nanocrystalline diamond-p- type crystalline silicon heterostructure; shallow donor state; sp² domain; structural property; trapped nitrogen atom; vacancies; Conductivity; Current measurement; Diamonds; Films; Nitrogen; Resistance; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998640

Filename

6998640