M/Si-GaAs/M diode: Role of the metal contact in electrical transport, a-particle and photon detection

Author

Dubecky, F. ; Zat´ko, B. ; Vanko, G. ; Hubik, P. ; Oswald, J. ; Kindl, D. ; Gombia, E. ; Kovac, J. ; Sagatova, A. ; Necas, V.

Author_Institution

Inst. of Electr. Eng., Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

M/Semi-insulating (SI) GaAs/M diodes with novel Mg-based metallization are investigated using current-voltage measurement, α-particle and photon detection. An anomalous decrease of the reverse current and peculiar photon spectra has been observed with such contact explainable by a strong electron accumulation due to the creation of a quasi-degenerate region at the Mg/SI-GaAs interface.

Keywords

III-V semiconductors; MIM devices; alpha-particle spectra; electric current measurement; gallium arsenide; magnesium; photons; semiconductor device metallisation; semiconductor diodes; voltage measurement; α-particle; GaAs; alpha particle; current-voltage measurement; diode; electrical transport; electron accumulation; metal contact; photon detection; photon spectra; quasidegenerate region; reverse current; Breakdown voltage; Current measurement; Metallization; Photonics; Silicon; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998643

Filename

6998643