Application of real time in-situ interferometry for the observation of GaN/Si MOVPE growth process

Author

Szymanski, T. ; Wosko, M. ; Paszkiewicz, B. ; Indykiewicz, K. ; Paszkiewicz, R.

Author_Institution

Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

In this paper the wide range of application of real time in situ reflectance signal observation based on four GaN on Si samples grown is shown. Mean reflectance value of oscillations for GaN growth and recovery times were extracted from reflectance traces acquired in situ. Moreover, RMS variation of grown samples were correlated with in situ monitoring that were in good agreement with presented model. We present what additional information can be extracted by in-situ interferometry.

Keywords

III-V semiconductors; MOCVD; gallium compounds; interferometry; multilayers; reflectivity; semiconductor growth; surface roughness; vapour phase epitaxial growth; wide band gap semiconductors; GaN-Si; MOVPE growth process; RMS variation; Si; mean reflectance; oscillations; real time in situ reflectance signal; real time in-situ interferometry; Epitaxial growth; Gallium nitride; Optical reflection; Reflectivity; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998650

Filename

6998650