Novel double-level-T-gate technology

Author

Fox, A. ; Mikulics, M. ; Hardtdegen, H. ; Trellenkamp, Stefan ; Arango, Y.C. ; Grutzmacher, D. ; Sofer, Z. ; Gregusova, D. ; Novak, Jiri ; Kordos, P. ; Marso, M.

Author_Institution

Peter Grunberg Inst. (PGI-9), Forschungszentrum Julich, Julich, Germany

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer. With the help of this technological process we prepared T-gate feet with widths as small as 200 nm. The major advantage of our process is its use of only standard optical lithography. It allows the fabrication of 100 nanometer size T-gates for transistors. High electron mobility transistors (HEMTs) were fabricated on an AlGaN/GaN/sapphire material structure with an original gate length Lg of 2 μm. Their cutoff frequency of 6 GHz was improved to 60 GHz by etching the gate to a 200 nm length double T-gate contact.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium compounds; high electron mobility transistors; microwave transistors; nanoelectronics; photolithography; sapphire; semiconductor device manufacture; wide band gap semiconductors; AlGaN-GaN-Al₂O₃; HEMT; T-gate feet; double T-gate contact; double-level-T-gate technology; frequency 6 GHz; frequency 60 GHz; high electron mobility transistors; metal gate interlayer; optical lithography; sapphire material structure; size 100 nm; size 2 mum; size 200 nm; wet etching; Aluminum gallium nitride; Etching; Fabrication; HEMTs; Lithography; Logic gates; MODFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998653

Filename

6998653