New phenanthrene-based organic semiconductor material for electronic devices

Author

Novota, M. ; Micjan, M. ; Nevrela, J. ; Flickyngerova, S. ; Juhasz, P. ; Misicak, R. ; Putala, M. ; Jakabovic, J. ; Weis, M.

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

This work describes the thin-film fabrication technology and characterization of devices based on organic semiconductor 3,6-bis(5`-hexyl-2,2`-bithiophen-5-yl)phenanthrene (H2T36Phen). The surface morphology, optical, and electrical properties are investigated for thin organic films. It demonstrates that the solution-based depositions require different substrate surface treatment than the evaporation-based deposition.

Keywords

organic field effect transistors; organic semiconductors; semiconductor device models; surface morphology; surface treatment; H2T36Phen; electrical properties; evaporation-based deposition; optical properties; phenanthrene-based organic semiconductor material; solution-based depositions; substrate surface treatment; surface morphology; thin organic films; thin-film fabrication technology; Films; OFETs; Optical device fabrication; Optical fibers; Organic semiconductors; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998655

Filename

6998655