Title :
Design of GaN tri-gate HEMTs
Author :
Alsharef, M. ; Granzner, Ralf ; Ture, E. ; Quay, Ruediger ; Racko, J. ; Breza, J. ; Schwierz, Frank
Author_Institution :
Inst. fur Mikro- und Nanoelektronik, Tech. Univ. Ilmenau, Ilmenau, Germany
Abstract :
The operation of GaN tri-gate HEMTs is investigated by numerical device simulations. It is shown that the threshold voltage of such structures strongly depends on the width of the AlGaN/GaN body and to a lesser extent on the body height. The body height becomes more important as the gate length is reduced. However, the beneficial effect of the side gates saturates at body heights around 100 nm, independent of the gate length.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; numerical analysis; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; gate length; high electron mobility transistors; numerical device simulations; threshold voltage; trigate HEMT; Etching; Gallium nitride; HEMTs; Logic gates; MODFETs; Threshold voltage;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998657
