Time resolved EBIC study of InAlN/GaN HFETs

Author

Satka, Alexander ; Priesol, J. ; Bernat, M. ; Donoval, Daniel ; Kovac, J. ; Allsopp, D.W.E. ; Kuzmik, J.

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

Transient phenomena in depletion-mode Gallium Nitride (GaN) Heterostructure Field-Effect Transistor (HFET) structures biased to various operation points corresponding to their real applications has been studied using Time-Resolved Electron Beam Induced Current (TREBIC) method. It has been found, that the amplitude and shape of the transient response depends on the gate voltage VGs and position of the electron beam in the active region of the HFET. Inhomogeneous lateral build-up and recovery of electric field has been observed at the gate in the drain access region of the HFETs, attributed to inhomogeneous distribution of the trapping centres in proximity of the Schottky gate electrode.

Keywords

EBIC; III-V semiconductors; aluminium compounds; electric fields; electron beams; gallium compounds; high electron mobility transistors; indium compounds; transient response; wide band gap semiconductors; EBIC; HFET; InAlN-GaN; Schottky gate electrode; electric field; gate voltage; heterostructure field-effect transistor; time-resolved electron beam induced current; transient response; trapping centres; Gallium nitride; HEMTs; Logic gates; MODFETs; Nonuniform electric fields; Time factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998666

Filename

6998666