Title :
Analysis of time dependent current collapse in AlGaN/GaN HEMTs
Author :
Maeta, Ryo ; Tokuda, Hirokuni ; Kuzuhara, Masaaki
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
We have studied current collapse in AlGaN/GaN HEMTs measured in the dark after turning off the light irradiation. The time dependence of the dynamic on-resistance was measured while keeping pulsed on/off switching sequence and energy levels of trapped electrons were measured as a function of elapsed time. The stress duration time after turning off the light is proposed to be an important factor for the precise evaluation of dynamic on-resistance.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device manufacture; wide band gap semiconductors; AlGaN-GaN; HEMT; dynamic on-resistance; light irradiation; time dependence; time dependent current collapse analysis; trapped electrons; Aluminum gallium nitride; Current measurement; Electron traps; HEMTs; Logic gates; MODFETs; Turning;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998667
