Modelling and optimization of GaN capped HEMTs

Author

Faramehr, S. ; Igic, P. ; Kalna, Karol

Author_Institution

Electron. Syst. Design Centre, Swansea Univ., Swansea, UK

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

The effect of GaN cap and its thickness on device performance is investigated using simulations by Silvaco Atlas toolbox. The simulations are based on meticulous calibration of a conventional, lateral, GaN capped, 1μm gate-length HEMT with a source-to-gate and gate-to-drain spacings of 2μm, and 3μm, respectively. The breakdown voltage of the GaN HEMT is improved by the aid of p-doped GaN cap and field plates to BV=630V showing an improvement of 540V in comparison to an unoptimized device. Furthermore, the possible creation of two dimensional hole gas (2DHG) at the interface of GaN cap and AlGaN barrier and its effect on the device behaviour is studied.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; optimisation; semiconductor device breakdown; semiconductor device models; semiconductor doping; two-dimensional hole gas; wide band gap semiconductors; 2DHG; GaN; GaN capped HEMT; Silvaco Atlas toolbox; breakdown voltage; device behaviour; device performance; field plates; gate-length HEMT; gate-to-drain spacing; p-doped GaN cap; size 1 mum; source-to-gate spacing; two dimensional hole gas; voltage 540 V; voltage 630 V; Aluminum gallium nitride; Electric breakdown; Gallium nitride; HEMTs; Logic gates; MODFETs; Two dimensional hole gas;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998668

Filename

6998668