Influence of structure geometry and bulk traps on switching transients of InAlN/GaN HEMT

Author

Marek, Jiri ; Satka, Alexander ; Donoval, Daniel ; Molnar, Miklos ; Priesol, J. ; Chvala, Ales ; Pribytny, Patrik

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

Impact of structure geometry and bulk traps on the performance of the n⁺⁺GaN/InAlN/AlN/GaN high electron mobility transistor (HEMT) using two-dimensional Sentaurus TCAD simulation tool were investigated. Simulations were performed by the electrophysical models calibrated on real devices. The results indicate a significant influence of both acceptor and donor traps on device switching characteristics.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device models; technology CAD (electronics); wide band gap semiconductors; HEMT; acceptor and traps; bulk traps; device switching; donor traps; electrophysical models; high electron mobility transistor; structure geometry; switching transients; two-dimensional Sentaurus TCAD simulation tool; Electron traps; Gallium nitride; HEMTs; Logic gates; Performance evaluation; Switches; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998669

Filename

6998669