Title :
Simulative study on physical modelling of submicrometer highly-strained In0.8Ga0.2As/AlAs resonant tunnelling diode
Author :
Jubadi, W.M. ; Md Zawawi, M.A. ; Missous, Mohamed
Author_Institution :
Sch. of Electr. Eng. & Electron., Univ. of Manchester, Manchester, UK
Abstract :
This work presents a physical modelling for an in-house fabricated submicron InGaAs/AlAs double barrier Resonant Tunnelling diode (RTD). The modelling is developed in ATLAS SILVACO to extend the study of advanced III-V quantum devices. The Negative Differential Resistance (NDR) current and the peak-to-valley current ratio (PVCR) are simulated and validated with measurement data. The effects of structural parameters such as barrier width, spacer width, quantum well thickness and doping on current-voltage characteristics of RTD are investigated.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; resonant tunnelling diodes; semiconductor device models; In0.8Ga0.2As-AlAs; advanced quantum device; double barrier resonant tunnelling diode; highly strained resonant tunnelling diode; negative differential resistance current; peak-to-valley current ratio; physical modelling; submicrometer resonant tunnelling diode; Current density; Doping; Mathematical model; Performance evaluation; Resistance; Resonant tunneling devices; Semiconductor process modeling;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998671
