Model of coupled defect level recombination with participation of multiphonons

Author

Racko, J. ; Granzner, Ralf ; Benko, P. ; Mikolasek, M. ; Harmatha, L. ; Kittler, M. ; Schwierz, Frank ; Breza, J.

Author_Institution

Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

We present a new model of two coupled defect-level recombination. Calculation of the generation and recombination rates is based on the so-called exchange times. These allow calculating the occupation probability of the trapping centres and subsequently the generation-recombination rates of free charge carriers appearing in the continuity equations. Each of these two coupled defect levels has its specific trap density, position in the forbidden band and capture cross-section obtained from DLTS measurements.

Keywords

deep level transient spectroscopy; defect states; energy gap; phonon-phonon interactions; DLTS measurement; continuity equation; coupled defect level; coupled defect level recombination rates; exchange times; forbidden band; free charge carrier; generation-recombination rates; multiphonon participation; trap density; trapping centre; Charge carrier processes; Energy states; Equations; Mathematical model; Probability; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998674

Filename

6998674