Defects in schottky diodes based on AlGaN/GaN heterostructures

Author

Stuchlikova, L. ; Kosa, A. ; Benkovska, J. ; Benko, P. ; Harmatha, L. ; Kovac, J.

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

In this paper, the investigation of four types of Schottky-gate structures prepared by low-pressure metal-organic vapour phase epitaxy on sapphire and 4H-SiC substrates, by the deep level transient Fourier spectroscopy is presented. Fifteen deep energy levels have been identified (activation energies: 0.12, 0.26, 0.28, 0.48, 0.50, 0.69, 0.72, 0.75, 0.76, 1.02, 1.23, 1.28, 1.35, 1.57, 1.58 eV). The correlation between deep levels observed on different structure types is discussed.

Keywords

Fourier transform spectra; III-V semiconductors; MOCVD coatings; Schottky diodes; aluminium compounds; crystal defects; gallium compounds; sapphire; silicon compounds; wide band gap semiconductors; Al₂O₃; AlGaN-GaN; H-SiC; Schottky diode defects; Schottky gate structures; electron volt energy 0.12 eV to 1.58 eV; low pressure metal organic vapour phase epitaxy; transient Fourier spectroscopy; Aluminum gallium nitride; Energy states; Gallium nitride; HEMTs; Nitrogen; Physics; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998675

Filename

6998675