Title :
DLTS study of electrically active defects in triple quantum well InGaAsN/GaAs heterostructures
Author :
Kosa, A. ; Stuchlikova, L. ; Benko, P. ; Jakus, J. ; Harmatha, L. ; Kovac, J. ; Sciana, B. ; Dawidowski, W. ; Radziewicz, D. ; Pucicki, D. ; Tlaczala, M.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
Deep Level Transient Fourier Spectroscopy study of charge carrier emission from quantum wells and electrically active defects in triple quantum well InGaAsN/GaAs heterostructures is discussed. Main attention is focused on the comparison and evaluation of measured spectra and to state the conditions of quantum well charge carrier emission identification. The presence of several deep energy levels and their parameters typical for GaAs are reported.
Keywords :
III-V semiconductors; deep level transient spectroscopy; gallium arsenide; indium compounds; semiconductor quantum wells; DLTS; InGaAsN-GaAs; charge carrier emission; deep energy level; deep level transient Fourier spectroscopy; electrically active defects; indium gallium arsenide nitrogen-gallium arsenide heterostructure; triple quantum well; Charge carriers; Educational institutions; Gallium arsenide; Indium; Nitrogen; Semiconductor device measurement; Voltage measurement;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998676
