Material and electrical properties of N-polar (GaN)/InN surfaces

Author

Cico, K. ; Adikimenakis, A. ; Micusik, M. ; Hascik, S. ; Georgakilas, A. ; Kuzmik, J.

Author_Institution

Inst. of Electr. Eng., Bratislava, Slovakia

fYear

2014

fDate

20-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

Angle-resolved XPS-analysis of the bare InN surface has revealed surface electron accumulation and negative band bending by about 0.65 eV at a distance of 1.1 nm. On the other hand this effect was substantially reduced by capping the InN surface by 2 to 4 monolayer of GaN. Negative polarisation charge at the GaN/InN interface of (partially) strained cap layer together with elimination of dangling bonds at the InN surface were consequently suggested. RIE in CCl₂F₂ provided highly selective etching of GaN over InN. Al₂O₃ deposited by ALD on (GaN)/InN surface created structures with metal-insulator-metal-like behaviour.

Keywords

III-V semiconductors; X-ray photoelectron spectra; alumina; atomic layer deposition; dangling bonds; gallium compounds; indium compounds; monolayers; semiconductor growth; semiconductor-insulator boundaries; sputter etching; surface conductivity; wide band gap semiconductors; ALD; GaN-InN-Al₂O₃; N-polar surface; RIE; angle-resolved XPS-analysis; atomic layer deposition; dangling bond; electrical properties; metal-insulator-metal-like structure; monolayer; negative band bending; partially strained cap layer; polarisation charge; reactive ion etching; surface electron accumulation; Aluminum oxide; Etching; Gallium nitride; HEMTs; MODFETs; Materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4799-5474-2

Type

conf

DOI

10.1109/ASDAM.2014.6998696

Filename

6998696