Title :
Application of TCAD in a development of a fully complementary vertical PNP IC technology for high performance analog applications
Author :
Spetik, R. ; Kapsia, S. ; Pjencak, J.
Author_Institution :
Dept. of R&D, ON Semicond., Roznov pod Radhostem, Czech Republic
Abstract :
Application of process and device TCAD is used for design and optimization of process integration of fully complementary Vertical PNP (VPNP) transistor into a Bi(CMOS) technology [1]. The paper addresses two selected tasks - optimization of vertical isolation and process integration of P-collector for the VPNP.
Keywords :
BiCMOS analogue integrated circuits; integrated circuit design; technology CAD (electronics); transistor circuits; BiCMOS technology; P-collector; TCAD application; VPNP transistor; device TCAD; fully-complementary vertical PNP IC technology; high-performance analog application; process integration; vertical isolation optimization; Aluminum; Boron; Electric breakdown; Implants; Junctions; Optimization; Transistors;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2014 10th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4799-5474-2
DOI :
10.1109/ASDAM.2014.6998698
