InGaN nano-LEDs for energy saving optoelectronics

Vertically integrated III-nitride nano-LEDs designed for operation in the telecommunication-wavelength range were fabricated and tested in the (p-GaN/InGaN/n-GaN/sapphire) material system. We found that the band edge luminescence energy of the nano-LEDs could be engineered by their size and by the strain interaction with the masked SiO₂/GaN substrates; it depends linearly on the structure size. The results of reliability measurements prove that our technological process is perfectly suited for long-term operation of the LEDs without any indication of degradation effects. The presented technology shows strong potential for future low energy consumption optoelectronics.