Detail study of SiC MOSFET switching characteristics

Author

Helong Li ; Munk-Nielsen, Stig

Author_Institution

Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark

fYear

2014

fDate

24-27 June 2014

Firstpage

1

Lastpage

5

Abstract

This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage and current are presented. Switching losses analysis is made according to the experiment results. The switching characteristics study and switching losses analysis could give some guidelines of gate driver IC and gate resistance selection, switching losses estimation and circuit design of SiC MOSFETs.

Keywords

field effect transistor switches; power MOSFET; silicon compounds; wide band gap semiconductors; SiC; circuit design; common source inductance; gate driver IC; gate driver maximum current; gate resistance; gate resistance selection; parasitic switching loop inductance; silicon carbide MOSFET switching characteristics; switching loss analysis; switching loss estimation; turn-off voltage; turn-on voltage; Inductance; Logic gates; MOSFET; Resistance; Silicon carbide; Switches; Switching loss; Power Devices; SiC MOSFET; Switching Characteristic;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics for Distributed Generation Systems (PEDG), 2014 IEEE 5th International Symposium on

Conference_Location

Galway

Type

conf

DOI

10.1109/PEDG.2014.6878691

Filename

6878691