A 3.9ppm/°C curvature-corrected bandgap voltage reference

Author

Mollasalmani, J. ; Ghaznavi-Ghoushchi, M.B.

Author_Institution

Dept. of EE., Shahed Univ., Tehran, Iran

fYear

2014

fDate

20-22 May 2014

Firstpage

201

Lastpage

204

Abstract

This paper presents a curvature-corrected bandgap voltage reference (BGR). The proposed design utilizes from a combination of one resistor and one PMOS to produce three different temperature behaviors. The voltage reference uses the peaking current source to prepare a temperature-independent reference voltage. It works with a supply voltage of 1.8 V and generates output voltage of 1.1353 V which exhibits a temperature coefficient of only 3.9ppm/°C in the temperature ranges from -40°C to 50°C. The simulation is fully done with 0.18μm CMOS technology. The ultra low output voltage variations of the designed BGR gains to use it in high-precision applications.

Keywords

CMOS integrated circuits; constant current sources; reference circuits; BGR; CMOS technology; PMOS; curvature-corrected bandgap voltage reference; peaking current source; resistor; size 0.18 mum; temperature -40 C to 50 C; temperature behaviors; temperature-independent reference voltage; ultra low output voltage variations; voltage 1.1353 V; voltage 1.8 V; CMOS integrated circuits; CMOS technology; Educational institutions; Photonic band gap; Resistors; Temperature distribution; Transistors; CMOS; bandgap voltage reference; curvature-correction; peaking current source;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2014 22nd Iranian Conference on

Conference_Location

Tehran

Type

conf

DOI

10.1109/IranianCEE.2014.6999532

Filename

6999532