• DocumentCode
    1785521
  • Title

    First-principles study of zinc oxide: The p-type doping perspective

  • Author

    Masoumi, Saeed ; Nadimi, E.

  • Author_Institution
    Electr. Eng. Dept., K.N. Toosi Univ. of Technol., Tehran, Iran
  • fYear
    2014
  • fDate
    20-22 May 2014
  • Firstpage
    318
  • Lastpage
    321
  • Abstract
    The first-principles study with pseudopotentials method based on density functional theory was performed to investigate the native point defects specially oxygen and zinc vacancy of pure ZnO. Also Ag-doped ZnO was studied to determine the ability of p-type conductivity. This investigation was carried out under oxygen-rich (O-rich) and zinc-rich (Zn-rich) conditions. The results indicate that oxygen and zinc vacancies are shallow donors and deep acceptors, respectively. The formation energies show that the oxygen vacancy can easily occur under Zn-rich condition. This would lead to the compensation of p-type doping. We also show that the substitutional Ag atom on the Zn lattice site could be considered as a p-type doping candidate.
  • Keywords
    II-VI semiconductors; ab initio calculations; density functional theory; electrical conductivity; impurity states; pseudopotential methods; semiconductor doping; silver; vacancies (crystal); wide band gap semiconductors; zinc compounds; ZnO:Ag; deep acceptors; density functional theory; first-principles study; formation energies; native point defects; oxygen vacancies; p-type conductivity; p-type doping; pseudopotentials method; shallow donors; zinc vacancies; Atomic measurements; Doping; Lattices; Optical films; Oxygen; Zinc oxide; ZnO; density functional theory; electronic properties; first-principles; formation energy; p-type; point defects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
  • Conference_Location
    Tehran
  • Type

    conf

  • DOI
    10.1109/IranianCEE.2014.6999556
  • Filename
    6999556