• DocumentCode
    1785587
  • Title

    Reduced-sized voltage-mode driver for high-speed I/O utilizing dynamic current-driven bulk biasing

  • Author

    Papi, Reza ; Badiey, Ali ; Rahmanikia, Navid ; Taherzadeh-Sani, Mohammad

  • Author_Institution
    Ferdowsi Univ. of Mashhad, Mashhad, Iran
  • fYear
    2014
  • fDate
    20-22 May 2014
  • Firstpage
    484
  • Lastpage
    487
  • Abstract
    In this paper, a modified structure for low-swing voltage-mode drivers in high-speed serial links is proposed. A dynamic current-driven bulk-biasing technique is applied to the driver transistors to achieve proper channel impedance termination and to minimize the transistors´ sizes. Simulation results of an 8-Gb/s serial link in all process corners of a 0.13-μm CMOS technology confirm that, by using the proposed dynamic current-driven bulk-biasing technique, the total size of the driver transistors is reduced by 23%. Moreover, the power overhead of the proposed technique is only less than 0.02% of the total power consumption of the driver.
  • Keywords
    CMOS integrated circuits; driver circuits; low-power electronics; CMOS technology; bit rate 8 Gbit/s; channel impedance termination; driver transistors; dynamic current-driven bulk-biasing technique; high-speed serial links; low-swing voltage-mode drivers; power overhead; reduced-sized voltage-mode driver; size 0.13 mum; CMOS integrated circuits; Impedance; Power demand; Simulation; Threshold voltage; Transistors; Transmitters; SERDES; current driven bulk; differential driver; high-speed serial link; transmitter; voltage-mode output driver;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
  • Conference_Location
    Tehran
  • Type

    conf

  • DOI
    10.1109/IranianCEE.2014.6999590
  • Filename
    6999590