DocumentCode
1785587
Title
Reduced-sized voltage-mode driver for high-speed I/O utilizing dynamic current-driven bulk biasing
Author
Papi, Reza ; Badiey, Ali ; Rahmanikia, Navid ; Taherzadeh-Sani, Mohammad
Author_Institution
Ferdowsi Univ. of Mashhad, Mashhad, Iran
fYear
2014
fDate
20-22 May 2014
Firstpage
484
Lastpage
487
Abstract
In this paper, a modified structure for low-swing voltage-mode drivers in high-speed serial links is proposed. A dynamic current-driven bulk-biasing technique is applied to the driver transistors to achieve proper channel impedance termination and to minimize the transistors´ sizes. Simulation results of an 8-Gb/s serial link in all process corners of a 0.13-μm CMOS technology confirm that, by using the proposed dynamic current-driven bulk-biasing technique, the total size of the driver transistors is reduced by 23%. Moreover, the power overhead of the proposed technique is only less than 0.02% of the total power consumption of the driver.
Keywords
CMOS integrated circuits; driver circuits; low-power electronics; CMOS technology; bit rate 8 Gbit/s; channel impedance termination; driver transistors; dynamic current-driven bulk-biasing technique; high-speed serial links; low-swing voltage-mode drivers; power overhead; reduced-sized voltage-mode driver; size 0.13 mum; CMOS integrated circuits; Impedance; Power demand; Simulation; Threshold voltage; Transistors; Transmitters; SERDES; current driven bulk; differential driver; high-speed serial link; transmitter; voltage-mode output driver;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2014 22nd Iranian Conference on
Conference_Location
Tehran
Type
conf
DOI
10.1109/IranianCEE.2014.6999590
Filename
6999590
Link To Document