A memristor-based TCAM (Ternary Content Addressable Memory) cell

Author

Junsangsri, Pilin ; Lombardi, Floriana ; Jie Han

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

fYear

2014

fDate

8-10 July 2014

Firstpage

1

Lastpage

6

Abstract

This paper presents a Ternary Content Addressable Memory (TCAM) cell that employs memristors as storage element. The TCAM cell requires two memristors in series to perform the traditional memory operations (read and write) as well as the search and matching operations for TCAM; this memory cell is analyzed with respect to different features (such as memristance range and voltage threshold) of the memristors to process fast and efficiently the ternary data. A comprehensive simulation based assessment of this cell is pursued by HSPICE. Comparison with other memristor-based CAMs as well as CMOS-based TCAMs shows that the proposed cell offers significant advantages in terms of power dissipation, reduced transistor count and search/match operation performance.

Keywords

CMOS integrated circuits; MOSFET; circuit simulation; content-addressable storage; integrated circuit modelling; memristors; CMOS-based TCAMs; HSPICE simulation; MOSFETs; memristance range; memristor-based TCAM cells; power dissipation; reduced transistor count; search-match operation performance; ternary content addressable memory; voltage threshold; Computer architecture; Discharges (electric); Memristors; Microprocessors; Resistance; Threshold voltage; Transistors; Memory Cell; Memristor; Modeling; TCAM; Ternary Content Addressable Memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscale Architectures (NANOARCH), 2014 IEEE/ACM International Symposium on

Conference_Location

Paris

Type

conf

DOI

10.1109/NANOARCH.2014.6880478

Filename

6880478