DocumentCode
1785719
Title
Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser — Dependence of the base layer structure
Author
Yoshida, Takafumi ; Yukinari, Masashi ; Kaneko, Tetsuya ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2014
fDate
11-15 May 2014
Firstpage
1
Lastpage
2
Abstract
Lasing characteristics of 1.3-μm npn-AlGaInAs/InP transistor laser (TL) depend on base layer structure were investigated through simulation and fabrication. As a result, while the TL has the same current gain, better lasing characteristics were observed for thinner thickness and wider bandgap.
Keywords
III-V semiconductors; aluminium compounds; laser beams; optical communication equipment; optical fabrication; semiconductor lasers; transistors; TL; bandgap; base layer structure; laser gain; lasing characteristics; npn-AlGaInAs/InP transistor laser; optical fabrication; simulation; thickness; wavelength 1.3 mum; Indium phosphide; Modulation; Photonic band gap; Surface emitting lasers; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location
Montpellier
Type
conf
DOI
10.1109/ICIPRM.2014.6880520
Filename
6880520
Link To Document